inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2sC1969 description high power gain- : g pe 12db,f= 27mhz, p o = 16w high reliability applications designed for 10~14 watts output power class ab amplifiers applications in hf band. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage r be = 25 v v ebo emitter-base voltage 5 v i c collector current 6 a p c collector power dissipation @t c =25 20 w collector power dissipation @t a =25 1.7 t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-a thermal resistance,junction to ambient 73.5 /w r th j-c thermal resistance,junction to case 6.25 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2sC1969 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma, i e = 0 60 v v (br)ceo collector-emitter breakdown voltage i c = 10ma; r be = 25 v v (br)ebo emitter-base breakdown voltage i e = 5ma, i c = 0 5 v i cbo collector cutoff current v cb = 30v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 4v; i c = 0 0.1 ma h fe dc current gain i c = 10ma; v ce = 12v 10 180 p o output power v cc = 12v; p in = 1w; f= 27mhz 16 18 w c collector efficiency 60 70 % ? h fe classifications x a b c d 10-25 20-45 35-70 55-110 90-180
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